Regensburg 2022 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 30: Poster 2
HL 30.10: Poster
Donnerstag, 8. September 2022, 11:00–13:00, P3
GaAs heterostructures for coupling of spin qubits to self-assembled quantum dots — •Selma Delić1,2, Priyabrata Mudi1,2, Sebastian Kindel2, Paola Atkinson3, Detlev Grützmacher1, and Beata Kardynał1,2 — 1Peter Grünberg Institute 9, Forschungszentrum Jülich, 52425 Jülich, Germany — 2Department of Physics, RWTH Aachen University, 52074 Aachen, Germany — 3Institut des Nano Sciences de Paris, CNRS UMR 7588, Sorbonne Université, 75005 Paris, France
Operation of quantum networks relies on encoding qubits on photons. These photons can be converted into spin qubits in many material systems. Yet, in order to take full advantage of the electrons with information encoded in their spins, the spin qubits should be scalable or the spin should be transferred to spin qubits that can be scaled into quantum processors. Here, we use singlet-triplet (S-T) qubits defined in a GaAs/AlGaAs gate-defined quantum (double-) dot (GDQD) as a scalable qubit. While GaAs is suitable for a qubit exchange with photons due to its direct bandgap, the GDQD does not confine holes. Therefore, we use a GaAs droplet dot (QD) to achieve a coherent transfer of information between a photon and a spin of an electron before the electron is transferred to the S-T qubit. In this contribution, we show the design of heterostructure that can be used to fabricate S-T qubit coupled to epitaxial GaAs QD. We further report on the progress in optical and electrical characterisation of the device in gated structures aligned to the GaAs QD.