Regensburg 2022 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 30: Poster 2
HL 30.19: Poster
Donnerstag, 8. September 2022, 11:00–13:00, P3
Skull-melting technique for the crystal growth of high-melting oxides — •Demian Ranftl, Klaus-Dieter Luther, and Cornelius Krellner — Physikalisches Institut, Goethe-Universität Frankfurt, 60438 Frankfurt/Main, Germany
For growing high melting oxide single crystals a quasi crucible-free induction melting technique can be used. Within a so-called skull-oven a high frequency electric field is applied to a powdered sample. A metallic part in the center of the powder will absorb the field and increase in temperature while also increasing the temperature of the oxides surrounding it. By cooling the outer sections of the sample it is possible to create a melt of a semiconductor in a crucible made out of its own sintered material, thus avoiding integration of unwanted crucible elements and enabling melts even at temperatures where no crucible material exist. This method was developed for the growth of, for example, ZrO2 crystals with a melting temperature of 2700∘C [1].
In this contribution we will present the working principles of the skull-oven built at the Physikalisches Institut (Goethe Universität, Frankfurt) together with a brief introduction to skull-melting and its features. Additionally, we will present first attempts of the single crystal growth of pure titanium(IV) oxide using this skull-melting technique.
[1] Assmus, W. and Whippey, N. Ueber das Skull-Schmelzen. Chem.-Ing.-Tech. 55, 716-717 (1983).