Regensburg 2022 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 30: Poster 2

HL 30.20: Poster

Donnerstag, 8. September 2022, 11:00–13:00, P3

Investigation into the electric properties of α-Ga2O3 based Schottky diodes with various Schottky metals — •S. Köpp, C. Petersen, H. von Wenckstern, and M. Grundmann — Universität Leipzig, Felix Bloch Institute for Solid State Physics, Semiconductor Physics Group, Leipzig, Germany

We present current-voltage measurements of α-Ga2O3:Sn based Schottky diodes with various Schottky metals and show on/off current ratios of up to 8 orders of magnitude. We thereby evaluate the effective Schottky barrier height by temperature dependent measurements in the range of 40K up to 400K.
Due to its possible applications in high-power electronics, a great deal of attention has been drawn to the wide bandgap semiconductor Ga2O3. In recent years, in addition to the well-researched thermodynamically stable monoclinic polymorph β-Ga2O3 the metastable corundum-structured α-phase of Ga2O3 has shown to have promising physical properties. With a bandgap of 5.0-5.3 eV [1] and a predicted breakdown field of 8 MV/cm [2] it surpasses the theoretical limits of β-Ga2O3 in terms of Baliga’s figure of merit [1]. Further, α-Ga2O3 is isostructural to α-Al2O3 and hence epitaxial growth on cost-efficient sapphire substrates is possible.

[1] Yang, D. et al., El. Mat. Letters 18.2 p. 113-118 (2022)
[2] Higashiwaki, M. et al., Semicond. Sci. Technol, 034001, (2016)