Regensburg 2022 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 42: 2D Materials 6 (joint session HL/CPP/DS)

HL 42.6: Vortrag

Freitag, 9. September 2022, 11:00–11:15, H36

Selective area growth of MoS2 via CVD on patterned GaN-AlOx substrates — •Simon Wörle, Theresa Grünleitner, Alex Henning, and Ian Sharp — Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany

Two-dimensional (2D) transition metal dichalcogenides have attracted considerable attention due to their unique optoelectronic properties. For the application of 2D materials in semiconductor devices, the controlled and scalable synthesis of high-quality 2D materials is critical.

Here, we demonstrate the selective area growth of MoS2 by chemical vapor deposition (CVD) on GaN substrates that were patterned with ultrathin aluminum oxide coatings created by low-temperature atomic layer deposition. Optical and scanning electron microscopy images show that mono- and few-layer MoS2 flakes preferentially nucleate and grow directly on the (uncoated) GaN. Atomic force microscopy and Raman measurements further reveal the formation of triangular and star-like shaped multilayer MoS2 crystals at the interfaces between GaN and AlOx. Moreover, the observed fixed orientation of the triangular MoS2 flakes with respect to the GaN substrate lattice indicates van der Waals epitaxy. By altering the CVD growth conditions, the density of deposited MoS2 flakes can be tuned, resulting in the growth of either isolated MoS2 nanosheets or continuous films, in the latter of which the individual flakes have coalesced.

The presented results mark an important step towards integrated MoS2 based heterostructures for semiconductor device applications.

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