Regensburg 2022 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 42: 2D Materials 6 (joint session HL/CPP/DS)

HL 42.7: Vortrag

Freitag, 9. September 2022, 11:15–11:30, H36

Patterned growth of transition metal dichalcogenides monolayers and multilayers for electronic and optoelectronic device application — •Seung Heon Han1, Ziyang Gan1, Emad Najafidehaghani1, Fatemeh Abtahi2, Christof Neumann1, Julian Picker1, Tobias Vogel2, Uwe Hübner3, Falk Eilenberger2, Antony George1, and Andrey Turchanin11Institute of Physical Chemistry, Friedrich Schiller University Jena, Jena, Germany — 2Institute of Applied Physics, Friedrich Schiller University Jena, Jena, Germany — 3Leibniz Institute of Photonic Technology (IPHT), Jena, Germany

We present a simple, large area, cost effective soft lithographic method for growth of high-quality two-dimensional transition metal dichalcogenides (TMDs). Initially, a liquid precursor (Na2MoO4 in aqueous solution) is patterned on the growth substrate using micro-molding in capillaries (MIMIC) technique. Subsequently, a chemical vapor deposition (CVD) step is employed to convert the precursor patterns to monolayer, few layers, or bulk TMDs, depending on the precursor concentration. The grown patterns were characterized using optical microscopy, atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, and photoluminescence spectroscopy to reveal their morphological, chemical, and optical characteristics. The applicability of the grown patterned TMDs were tested for application such as field effect transistors, photodetectors, and memtransistor devices.

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