HL 48: Heterostructures, Interfaces and Surfaces: Fabrication and Structure
Donnerstag, 12. März 2026, 15:00–17:15, POT/0251
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15:00 |
HL 48.1 |
Cross-sectional scanning tunneling microscopy (XSTM) study of nearly lattice-matched III-V semiconductor heterostructures — •Hitesh Kumar, Rüdiger Schott, Zijin Lei, Werner Wegscheider, and Stefan Fölsch
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15:15 |
HL 48.2 |
Theoretical Exploration of the Electronic Structure at Group-III Nitride Interfaces — •Maximilian Lauer, Christian Maas, Jan M. Waack, Michael Czerner, and Christian Heiliger
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15:30 |
HL 48.3 |
GaPN growth on As-Modified Si(100) for defect-reduced heteroepitaxy — •Hitha Haridas, Kai Daniel Hanke, Agnieszka Paszuk, and Thomas Hannappel
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15:45 |
HL 48.4 |
Acoustoelectric effect in organic-inorganic semiconductor systems — •Paromita Bhattacharjee, Patrick Ganswindt, Alexander S. Urban, and Hubert Krenner
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16:00 |
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15 min. break
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16:15 |
HL 48.5 |
Ultra-high vacuum exfoliation method for the preparation of large-area single layer TMDC films — •Zhiying Dan, Ronak Sarmasti Emami, Antonija Antonija Grubisic-Cabo, Petra Rudolf, Deepnarayan Biswas, and Tien-Lin Lee
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16:30 |
HL 48.6 |
Electrical conduction and sensing properties of contacted CNTs after MOF synthesis — •Marvin J. Dzinnik, Adrian Hannebauer, Feriel Friha, Andreas Schaate, and Rolf J. Haug
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16:45 |
HL 48.7 |
Nucleation behavior for remote epitaxy of GaAs and AlAs on carbon-covered GaAs substrates — •Binamra Shrestha, Tobias Henksmeier, and Dirk Reuter
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17:00 |
HL 48.8 |
Quantum confinement in semiconductor random alloys: a case study on Si/SiGe/Si — •Daniel Dick, Florian Fuchs, Sibylle Gemming, and Jörg Schuster
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