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Berlin 2008 – wissenschaftliches Programm

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DF: Fachverband Dielektrische Festkörper

DF 4: High-k dielectrics for highly scaled Silicon-based Micro- and Nanoelectronics

Montag, 25. Februar 2008, 14:00–17:00, EB 107

14:00 DF 4.1 Hauptvortrag: High-k gate dielectrics on silicon and on high-mobility semiconductors: Atomic-scale phenomena underlying transistor performance — •Martin M. Frank
14:40 DF 4.2 Hauptvortrag: Molecular Beam Epitaxy of crystalline oxides on Si for C-MOS and for the monolithic integration of semiconductors on Silicon — •Saint-Girons Guillaume, Merckling Clément, El-Kazzi Mario, Becerra Loic, Regreny Philippe, Patriarche Gilles, Largeau Ludovic, Favre-Nicolin Vincent, and Hollinger Guy
15:05 DF 4.3 Hauptvortrag: Damascene metal gate technology: A solution to high-k gate stack challenges? — •Udo Schwalke
15:30 DF 4.4 Hauptvortrag: Do new materials solve the upcoming challenges of future DRAM memory cells? — •Uwe Schröder
16:10 DF 4.5 Hauptvortrag: AVD and ALD developments for next generation MIM capacitors and memory applicationsPeter K. Baumann, Christoph Lohe, and •Michael Heuken
16:35 DF 4.6 Hauptvortrag: MIM Capacitors for Wireless Communication Technologies — •Christian Wenger
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