Berlin 2008 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 10: Preparation and characterization
HL 10.4: Vortrag
Montag, 25. Februar 2008, 10:15–10:30, EW 202
Preparation and tunneling characteristics of MOS structures for Si-based IR light emitters — •Stephan Suckow1, Martin Kittler1,2, Winfried Seifert1,2, Tzanimir Arguirov1,2, Manfred Schmidt3, Bert Stegemann3, and Heike Angermann3 — 1IHP/BTU JointLab, Konrad-Wachsmann-Allee 1, 03046 Cottbus, Germany — 2IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — 3Hahn-Meitner-Institut Berlin, Kekuléstraße 5, 12489 Berlin, Germany
Si based light emitters, such as MOS structures based on dislocation networks, are attractive candidates for the generation of electroluminescence in the IR spectral range to be applied e.g. in optical on-chip interconnects. In the present work the preparation of an appropriate MOS structure that facilitates efficient charge carrier injection is explored and its charge carrier tunneling and recombination characteristics are analyzed. In this respect MOS structures with ultra-thin tunnel oxides fabricated by wet-chemical oxidation of Si wafers and thermally deposited Ti contacts turned out to produce the most efficient and reliable results. Moreover, electroluminescence measurements revealed an anomalous temperature behavior of band-to-band recombination with enhanced intensity at higher temperature (300 K). As photoluminescence intensity inversely increases with decreasing temperature, this effect is clearly correlated to efficient minority charge carrier injection via the MOS contact and points towards an application as room temperature IR light emitter.