DS 11: Layer Growth: Evolution of Structure and Simulation
Dienstag, 24. März 2009, 14:00–16:00, GER 37
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14:00 |
DS 11.1 |
Material dependent smoothing of rippled surfaces — •Johanna Röder and Hans-Ulrich Krebs
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14:15 |
DS 11.2 |
Stacking fault suppression in ion assisted growth of Ir on Ir(111) — •Sebastian Bleikamp and Thomas Michely
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14:30 |
DS 11.3 |
Ion induced Burying Effect of Au Nanoparticles on SiO2: Influence of Sputtering — A. Klimmer, M. Trautvetter, B. Kuerbanjiang, •P. Ziemann, J. Biskupek, and U. Kaiser
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14:45 |
DS 11.4 |
Basics of the atomic layer deposition of HfO2 onto Si/SiO2 substrates: in-situ investigations with XPS, XAS and UHV-AFM — •Massimo Tallarida, Konstantin Karavaev, Krzysztof Kolanek, and Dieter Schmeisser
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15:00 |
DS 11.5 |
Evolution of the interfacial layer during the atomic layer deposition of HfO2 on Si/SiO2 substrates — •Konstantin Karavaev, Massimo Tallarida, and Dieter Schmeisser
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15:15 |
DS 11.6 |
In-situ investigations of the atomic layer deposition of HfO2 with UHV/AFM — •Krzysztof Kolanek, Konstantin Karavaev, Massimo Tallarida, and Dieter Schmeisser
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15:30 |
DS 11.7 |
Pattern Formation in Langmuir-Blodgett Transfer Systems — •Michael Hubert Köpf and Rudolf Friedrich
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15:45 |
DS 11.8 |
Wachstum dünner Ni63Al37-Legierungsschichten auf Cu(001) — •Wolfgang Donner und Noureddine Anibou
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