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Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 16: III-V semiconductors II

Tuesday, March 24, 2009, 09:30–12:00, POT 151

09:30 HL 16.1 Temperaturverhalten des In(Cd)-Defekt-Komplexes in AlN — •Jens Niederhausen, Reiner Vianden und Joao Guilherme Martins Correia
09:45 HL 16.2 Temperature and Time Resolved Measurements of Nitride-based Quantumwell Structures on Modified GaN Substrates — •Miran Alic, Christian Nenstiel, Ronny Kirste, Markus R.Wagner, Axel Hoffmann, Tadek Suski, Martin Albrecht, and Tobias Schulz
10:00 HL 16.3 Stain dependent optical properties of AlN measured by means of VUV-spectroscopic Ellipsometry — •Christoph Werner, Marcus Röppischer, Christoph Cobet, Carsten Buchheim, Rüdiger Goldhahn, Frank Brunner, and Nobert Esser
10:15 HL 16.4 High Excitation Photoluminescence studies on epitaxially grown AlN layers — •Robert Anton Richard Leute, Martin Feneberg, Klaus Thonke, Rolf Sauer, Sarad Bahadur Thapa, Ferdinand Scholz, Yoshitaka Taniyasu, and Makoto Kasu
10:30 HL 16.5 Optical characterisation of AlGaN/GaN MQW — •Christian Nenstiel, Ronny Kirste, Viola Küller, Frank Brunner, Arne Knauer, Markus Weyers, and Axel Hoffmann
  10:45 15 min. break
11:00 HL 16.6 Electrical conductivity in InN nanowires — •Florian Werner, Friederich Limbach, Michael Carsten, Christian Denker, Joerg Malindretos, and Angela Rizzi
11:15 HL 16.7 Optimization of AlN-based seeding and superlattice buffer layers to grow high-quality AlxGa1-xN with Al content up to x=0.66 on Si (111) substrates — •P. Saengkaew, A. Dadgar, J. Blaesing, B. Bastek, F. Bertram, T. Hempel, P. Veit, J. Christen, and A. Krost
11:30 HL 16.8 Pulsed Growth of AlN by MOVPE — •Hanno Kröncke, Stephan Figge, and Detlef Hommel
11:45 HL 16.9 Pseudosymmetrische (11-20)-Reflexe bei a-planarem GaN auf r-planarem Saphir — •Matthias Wieneke, Jürgen Bläsing, Armin Dadgar und Alois Krost
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