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09:30 |
HL 16.1 |
Temperaturverhalten des In(Cd)-Defekt-Komplexes in AlN — •Jens Niederhausen, Reiner Vianden und Joao Guilherme Martins Correia
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09:45 |
HL 16.2 |
Temperature and Time Resolved Measurements of Nitride-based Quantumwell Structures on Modified GaN Substrates — •Miran Alic, Christian Nenstiel, Ronny Kirste, Markus R.Wagner, Axel Hoffmann, Tadek Suski, Martin Albrecht, and Tobias Schulz
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10:00 |
HL 16.3 |
Stain dependent optical properties of AlN measured by means of VUV-spectroscopic Ellipsometry — •Christoph Werner, Marcus Röppischer, Christoph Cobet, Carsten Buchheim, Rüdiger Goldhahn, Frank Brunner, and Nobert Esser
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10:15 |
HL 16.4 |
High Excitation Photoluminescence studies on epitaxially grown AlN layers — •Robert Anton Richard Leute, Martin Feneberg, Klaus Thonke, Rolf Sauer, Sarad Bahadur Thapa, Ferdinand Scholz, Yoshitaka Taniyasu, and Makoto Kasu
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10:30 |
HL 16.5 |
Optical characterisation of AlGaN/GaN MQW — •Christian Nenstiel, Ronny Kirste, Viola Küller, Frank Brunner, Arne Knauer, Markus Weyers, and Axel Hoffmann
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10:45 |
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15 min. break
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11:00 |
HL 16.6 |
Electrical conductivity in InN nanowires — •Florian Werner, Friederich Limbach, Michael Carsten, Christian Denker, Joerg Malindretos, and Angela Rizzi
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11:15 |
HL 16.7 |
Optimization of AlN-based seeding and superlattice buffer layers to grow high-quality AlxGa1-xN with Al content up to x=0.66 on Si (111) substrates — •P. Saengkaew, A. Dadgar, J. Blaesing, B. Bastek, F. Bertram, T. Hempel, P. Veit, J. Christen, and A. Krost
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11:30 |
HL 16.8 |
Pulsed Growth of AlN by MOVPE — •Hanno Kröncke, Stephan Figge, and Detlef Hommel
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11:45 |
HL 16.9 |
Pseudosymmetrische (11-20)-Reflexe bei a-planarem GaN auf r-planarem Saphir — •Matthias Wieneke, Jürgen Bläsing, Armin Dadgar und Alois Krost
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