SYPN 1: Polarization Field Control in Group-III-Nitrides
Donnerstag, 25. März 2010, 09:30–12:15, H1
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09:30 |
SYPN 1.1 |
Hauptvortrag:
Growth and applications of N-polar (Al,Ga,In)N — •Stacia Keller and Umesh K Mishra
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10:00 |
SYPN 1.2 |
Hauptvortrag:
Green light-emitting diodes and laser heterostructures on semi-polar GaN(11-22)/sapphire substrates — •Andre Strittmatter
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10:30 |
SYPN 1.3 |
Hauptvortrag:
Pros and cons of green InGaN lasers on polar GaN substrates — •Uwe Strauss, Adrian Avramescu, Teresa Lermer, Jens Müller, Christoph Eichler, and Stephan Lutgen
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11:00 |
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15 Min. Coffee Break
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11:15 |
SYPN 1.4 |
Hauptvortrag:
Molecular beam epitaxy as a method for the growth of free-standing zinc-blende GaN layers and substrates. — •Sergei Novikov, Thomas Foxon, and Anthony Kent
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11:45 |
SYPN 1.5 |
Hauptvortrag:
Three-dimensional GaN for semipolar light emitters — •Thomas Wunderer, Frank Lipski, Stephan Schwaiger, Ferdinand Scholz, Martin Feneberg, Klaus Thonke, Andrey Chuvilin, Ute Kaiser, Sebastian Metzner, Frank Bertram, Jürgen Christen, Clemens Vierheilig, and Ulrich Schwarz
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