DS 27: Thin film characterization: structure analysis and composition (post growth analysis XRD, etc..)
Wednesday, March 28, 2012, 16:30–17:30, H 2032
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16:30 |
DS 27.1 |
Molecular beam epitaxy of Ge-Sb-Te thin films on Si substrates — •Alessandro Giussani, Perumal Karthick, Peter Rodenbach, Michael Hanke, Wolfgang Braun, Raffaella Calarco, and Henning Riechert
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16:45 |
DS 27.2 |
Structural properties of MBE-grown Bi2SexTe3−x layers — •Steffen Schreyeck, Christian Kehl, Nadezda V. Tarakina, Tanja Borzenko, Claus Schumacher, Grzegorz Karczewski, Jean Geurts, Karl Brunner, and Laurens W. Molenkamp
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17:00 |
DS 27.3 |
X-ray Resonant Reflectivity study of Transition Metal Oxides — •Sebastian Macke, Jorge Hamann-Borrero, Abdullah Radi, Ronny Sutarto, George Christiani, Gennady Logvenov, George Sawatzky, Bernhard Keimer, and Vladimir Hinkov
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17:15 |
DS 27.4 |
Growth of lead-free piezoelectric thin films of 0.92 (Bi0.5Na0.5TiO3)-0.8 BaTiO3 (BNT-BT) by pulsed laser deposition — •Mehrdad Baghaie Yazdi, Christian Bausch, Torsten Granzow, Wook Jo, and Lambert Alff
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