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09:30 |
HL 2.1 |
Performance degradation of AlGaN/GaN (MIS)-HEMTs grown on Silicon substrate under different operational stress-conditions — •anthony calzolaro, rico hentschel, andre wachowiak, and thomas mikolajick
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09:45 |
HL 2.2 |
Metastable Negative Differential Capacitances in GaN-based pn- and tunnel-junctions — •Hartmut Witte, Aqdas Fariza, Silvio Neugebauer, Christoph Berger, Armin Dadgar, and Andre Strittmatter
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10:00 |
HL 2.3 |
Vertical field-effect transistors based on regular GaN nanostructure arrays — •Klaas Strempel, Feng Yu, Friedhard Römer, Bernd Witzigmann, Andrey Bakin, Hergo-Heinrich Wehmann, Hutomo Suryo Wasisto, and Andreas Waag
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10:15 |
HL 2.4 |
Realizing tunnel junctions in semiconductors with bandgap higher than 5 eV for electro-optical applications — •Luca Sulmoni, Christian Kuhn, Martin Guttmann, Johannes Glaab, Norman Susilo, Tim Wernicke, Markus Weyers, and Michael Kneissl
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10:30 |
HL 2.5 |
Small-area current injection in GaN-based light emitters with tunnel junctions — •Christoph Berger, Silvio Neugebauer, Cleophace Seneza, Jürgen Bläsing, Armin Dadgar, and André Strittmatter
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10:45 |
HL 2.6 |
Poole-Frenkel-ionization of acceptors in Al0.76Ga0.24N:Mg short-period superlattices — •A. Muhin, C. Kuhn, M. Guttmann, J. R. Aparici, L. Sulmoni, T. Wernicke, and M. Kneissl
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11:00 |
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15 min. break
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11:15 |
HL 2.7 |
Enhanced light extraction and internal quantum efficiency for fully-transparent AlGaN-based UVC LEDs on patterned-AlN/sapphire substrate — •Martin Guttmann, Anna Ghazaryan, Luca Sulmoni, Norman Susilo, Eviathar Ziffer, Tim Wernicke, and Michael Kneissl
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11:30 |
HL 2.8 |
Study of heavy-ion irradiation induced degradation on AlInN/GaN on Si High- Electron-Mobility Transistors (HEMTS) — •Seshagiri rao Challa, Nahuel Vega, Christian Kristukat, Nahuel a Müller, Mario Debray, Gordon Schmidt, Jürgen Christen, Florian Hörich, Hartmut Witte, Armin Dadgar, and André Strittmatter
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11:45 |
HL 2.9 |
InGaN/GaN microLED arrays as a novel illumination source for imaging and microscopy — •Jan Gülink, Michael Fahrbach, Daria Bezshlyakh, Hutomo Suryo Wasisto, and Andreas Waag
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12:00 |
HL 2.10 |
Blue micro-LEDs on Si(111) for optogenetic applications — •Silvio Neugebauer, Jürgen Bläsing, Armin Dadgar, André Strittmatter, Martin Deckert, Bertram Schmidt, Michael Lippert, and Frank Ohl
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12:15 |
HL 2.11 |
AlGaN-based deep UV LEDs grown on high temperature annealed epitaxially laterally overgrown AlN/sapphire — •Norman Susilo, Eviathar Ziffer, Sylvia Hagedorn, Leonardo Cancellara, Sebastian Metzner, Bettina Belde, Frank Bertram, Sebastian Walde, Luca Sulmoni, Martin Guttmann, Tim Wernicke, Jürgen Christen, Martin Albrecht, Markus Weyers, and Michael Kneissl
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12:30 |
HL 2.12 |
Influence of the GaN:Mg contact layer on the performance characteristics of AlGaN based UVC LED heterostructures — •Eviathar Ziffer, Norman Susilo, Luca Sulmoni, Martin Guttmann, Tim Wernicke, and Michael Kneissl
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12:45 |
HL 2.13 |
Low resistance V/Al/Ni/Au n-contacts on n−Al0.9Ga0.1N for UVC LEDs — •Verena Montag, Luca Sulmoni, Frank Mehnke, Tim Wernicke, and Michael Kneissl
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13:00 |
HL 2.14 |
Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications — •Henning Winterfeld, Lars Thormählen, Hanna Lewitz, Erdem Yarar, Tom Birkoben, Nicolai Niethe, Nicolas Preinl, Henning Hanssen, Eckhard Quandt, and Hermann Kohlstedt
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13:15 |
HL 2.15 |
Silicon Nitride Interface Engineering for the Realization of Dopant-free MOSFETs — •Benjamin Richstein, Thomas Grap, Lena Hellmich, and Joachim Knoch
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