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Di, 14:45 |
O 34.4 |
surface characterization of ruthenium as novel barrier layer during the chemical mechanical polishing process of integrated circuit for sub-10 nm technology node — •jie cheng, xinchun lu, and jinshan pan
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Di, 15:00 |
O 34.5 |
Projection Analysis of EXAFS Modulations — Alireza Bayat, Angelika Chassé, Reinhard Denecke, Stefan Förster, Paula Huth, Eva-Maria Zollner, and •Karl-Michael Schindler
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Di, 15:15 |
O 34.6 |
Removing Photoemission Features from Auger-yield NEXAFS Spectra — •Ole Lytken, Daniel Wechsler, and Hans-Peter Steinrück
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Di, 15:30 |
O 34.7 |
New reconstruction method for Metastable Induced Electron Spectra of molecules on solid surfaces — •Tobias B. Gäbler, Wichard J. D. Beenken, and Erich Runge
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Di, 14:00 |
O 35.1 |
The unoccupied electronic structure of 2H tungsten disulfide — •Lukas Musiol, Philipp Eickholt, and Markus Donath
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Di, 14:15 |
O 35.2 |
Charge-transfer across the MoSe2/WSe2 interface studied with second-harmonic imaging microscopy — •Jonas E. Zimmermann, Ulrich Höfer, and Gerson Mette
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Di, 14:30 |
O 35.3 |
Phonon dispersion of bulk MoS2 determined by high resolution electron energy loss spectroscopy — •Holger Schwarz, Christian Heidrich, Florian Speck, and Thomas Seyller
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Di, 14:45 |
O 35.4 |
Composition dependence of charge driven phase transition in Group-VI transition metal dichalcogenides from first-principles — Urvesh Patil and •Nuala Mai Caffrey
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Di, 15:00 |
O 35.5 |
Observing different levels of airborne contaminations on TMDC materials — •Korbinian Pürckhauer, Dominik Kirpal, Alfred J. Weymouth, and Franz J. Giessibl
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Di, 15:15 |
O 35.6 |
Unraveling the growth mechanism of single-domain molybdenum disulfide on Au(111) — •Moritz Ewert, Lars Buß, Paolo Moras, Jens Falta, and Jan Ingo Flege
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437