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HL: Fachverband Halbleiterphysik
HL 30: Poster I
HL 30.12: Poster
Dienstag, 17. März 2020, 13:30–15:45, P3
Material Investigations of Corundum-Structured Group-III-Sesquioxides by PLD on (00.1) Al2O3 — •C. Petersen, A. Hassa, M. Kneiß, H. Wenckstern, D. Splith, C. Sturm, and M. Grundmann — Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, Linnéstraße 5, 04103 Leipzig, Germany
Due to its outstanding material properties, recently much attention was drawn to the wide bandgap semiconductor gallium oxide for possible applications e.g. in high-power devices. Apart from the well-studied β-phase of Ga2O3, the corundum α-polymorph is in particular well suited for heterostructures, because it is isostructural to α-In2O3 and α-Al2O3. This, in principle, enables alloying the material system across the entire phase diagram and bandgap engineering over a considerable energy range (Eg, Ga2O3 = 5.3 eV, Eg, In2O3 = 3.7 eV and Eg, Al2O3 = 8.75 eV [1].
In this contribution we present material properties of binary α-Ga2O3 thin films as well as it’s ternary alloys with In or Al. The thin films were grown by pulsed laser deposition with continuous composition spread [2] on (00.1) Al2O3.
Resulting samples were investigated by means of X-ray diffraction, transmission, energy-dispersive X-ray spectroscopy, atomic force microscopy, and electrical transport measurements.
[1] S. Fujita et al., Jpn. J. Appl. Phys., 1202A3 (2016).
[2] H. v. Wenckstern et al., CrystEngComm 15, 10020 (2013).