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HL: Fachverband Halbleiterphysik
HL 30: Poster I
HL 30.23: Poster
Dienstag, 17. März 2020, 13:30–15:45, P3
Electronic properties of the GaP/Si(001) heterointerface studied by HAXPES — Oleksandr Romanyuk1, •Jan P. Stöckmann2, Agnieszka Paszuk2, Oliver Supplie2, Regan G. Wilks3, Jakob Bombsch3, Claudia Hartmann3, Raül Garcia-Diez3, Shigenori Ueda4, Igor Bartoš1, Ivan Gordeev1, Jana Houdkova1, Peter Kleinschmidt2, Marcus Bär3, Petr Jiříček1, and Thomas Hannappel2 — 1Institute for Physics, Fundamentals of energy materials, University of Technology, Ilmenau, Germany — 2Institute of Physics, Prague, Czech Republic — 3Department Interface Design, Helmholtz-Zentrum Berlin, Germany — 4SPring-8, National Institute for Materials Science (NIMS), Japan
For highly efficient III-V-on-Si optoelectronic devices it is crucial to prepare defect-free III-V/Si heterointerfaces with defined electronic properties. Defects known as antiphase boundaries in the III-V layer can be avoided by preparing the Si(100) surface with double-atomic steps. Here, GaP/Si(001) heterointerfaces prepared by MOCVD were investigated by hard X-ray photoelectron spectroscopy. Thin (4 - 50 nm) GaP films were grown on H- or As-terminated Si(001) surfaces. Preparation of double-atomic steps on Si surface was controlled by optical in situ spectroscopy. We observed core-level broadening and shifts of peak maxima positions depending on GaP thickness, Si wafer doping type and Si surface preparation. We were able to identify interface-related core level components and to deduce the valence band offsets at the heterostructures. These results are related to charge displacements at the interface.