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HL: Fachverband Halbleiterphysik
HL 30: Poster I
HL 30.3: Poster
Dienstag, 17. März 2020, 13:30–15:45, P3
Investigation of charge carrier transport mechanism in amorphous ZnON and ZnSnO thin films by temperature dependent Hall effect measurements — Antonia Welk, Holger von Wenckstern, and •Marius Grundmann — Felix-Bloch-Institut für Festkörperphysik, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany
Amorphous semiconductors as zinc oxynitride (a-ZnON) or zinc tin oxide (a-ZTO) with Hall mobilities up to 100 cm2V−1s−1 [1,2] or 13 cm2V−1s−1 [3] are promising low-temperature deposition channel materials for thin film transistors (TFTs). For the enhancement of device performance it is necessary to gain a profound understanding of the charge carrier transport mechanism.
In this work we performed temperature dependent Hall effect measurements on magnetron sputtered ZnON and PLD grown ZnSnO thin films. We compared our experimental results to the theoretical description of percolation transport in the random band edge model [4,5]. That way we were able to validate the theoretical description for two further amorphous oxides aside of InGaZnO [5] and determined the band edge disorder parameter δ and the conduction mobility µ0.
[1] A. Reinhardt et al., Phys. Status Solidi A 213 (7), 1767 (2016)
[2] H. Kim et al.: Sci. Rep. 3, 1459 (2013)
[3] P. Schlupp et al., MRS Proceedings 1633, 101-104 (2014)
[4] I.I. Fishchuk et al., Phys. Rev. B 93 (19), 195204 (2016)
[5] A.V. Nenashev et al., Phys. Rev. B 100 (12), 125202 (2019)