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HL: Fachverband Halbleiterphysik
HL 30: Poster I
HL 30.4: Poster
Dienstag, 17. März 2020, 13:30–15:45, P3
Growth of transparent, p-conductive γ-CuI by PLD — •Philipp Storm, Michael Bar, Chang Yang, Daniel Splith, Holger von Wenckstern, Michael Lorenz, and Marius Grundmann — Universität Leipzig, Felix-Bloch Institut für Festkörperphysik
Transparent semi-conductive materials (TSM) are typically unipolar such that heterostructures are required for pn-diodes. So far, n-type TSMs like ZnO or Ga2O3 typically have high electron mobility while p-TSMs suffer very low hole mobilities. CuI is currently one of the most promising p-type TSM due its wide band gap, high hole mobility and density as well as high exciton binding energy [1]. However, the physical vapor deposition (for example sputtering or thermal evaporation) of CuI turned out to be difficult to obtain smooth thin films [2,3] and therefore impeding progress towards uniform multilayered device structures. In this work, the growth of CuI by pulsed laser deposition (PLD) is presented. The morphological, structural and optical properties of the obtained thin films suggest a high potential of PLD-grown CuI for thin-film device applications.
[1] M. Grundmann et al. : Phys. Status Solidi A 210, 9, 1671 (2013)
[2] C. Yang et al. : Sci. Rep. 6, 21937 (2016)
[3] C. Moditswe et al. : Ceramics International 43, 6, 5121 (2017)