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HL: Fachverband Halbleiterphysik
HL 30: Poster I
HL 30.5: Poster
Dienstag, 17. März 2020, 13:30–15:45, P3
Electrical properties of all amorphous ZnMgON/ZnCo2O4 bipolar heterojunction diodes — •Arne Jörns, Antonia Welk, Anna Reinhardt, Holger von Wenckstern, and Marius Grundmann — Felix-Bloch-Institut für Festkörperphysik, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany
Amorphous zinc magnesium oxynitride (a-ZnMgON) is a promising low-temperature deposition material for flexible electronics. The incorporation of magnesium into amorphous ZnON, typically having free electron concentrations above 1018 cm−3 [1], leads to a reduction of the free carrier concentration and an absorption edge shift towards higher energies. By means of co-sputtering we were able to fabricate a-ZnMgON thin films with magnesium concentrations up to 5 at. %, free carrier concentrations in the range of 1016-1017 cm−3 and an absorption edge of 1.3 eV or higher.
In this study, we investigated all amorphous n-ZnMgON/p-ZnCo2O4 bipolar heterojunction diodes deposited on glass with rectification ratios in the range of 103-104. Modeling of the IV-characteristics yields a series resistance of 130-140 Ω, a parallel resistance in the range of 1010-1011 Ω and an ideality factor of 2.8. In order to suppress leakage currents in the reverse bias regime, a thin insulating, highly resistive ZnMgON layer was introduced between ZnMgON and ZnCo2O4. Furthermore, the diodes were investigated by means of temperature dependent IV-measurements and capacitance voltage measurements.
[1] A. Reinhardt et al., Phys. Status Solidi A 213 (7), 1767 (2016)