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HL: Fachverband Halbleiterphysik
HL 75: Poster IIIB
HL 75.11: Poster
Donnerstag, 19. März 2020, 15:00–17:30, P2/3OG
Transient four-wave-mixing in semiconductors with half-gap pulses — •Alexander Trautmann1, Wolf-Rüdiger Hannes1, Markus Stein2, Felix Schäfer2, Martin Koch2, and Torsten Meier1 — 1Department of Physics and CeOPP, University of Paderborn, Warburger Straße 100, D-33098 Paderborn, Germany — 2Department of Physics and Materials Science Center, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany
Transient four-wave-mixing (FWM) is demonstrated to occur in bulk semiconductors when excited by two spatiotemporally overlapping strongly off-resonant pulses. This χ(3)-process can be analyzed theoretically by means of the semiconductor Bloch equations including inter- and intraband excitations [1]. As a result of the interference of different excitation pathways, characteristic multi-peak structures may appear in the FWM spectra. The spectra are also significantly broadened compared to the width of the incident pulses. These theoretical findings are qualitatively confirmed by spectrally-resolved FWM experiments on bulk CdTe and bulk GaAs samples with excitation wavelengths near half the band gap.
[1] W.-R. Hannes and T. Meier, Phys. Rev. B 99, 125301 (2019).