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HL: Fachverband Halbleiterphysik
HL 75: Poster IIIB
HL 75.5: Poster
Donnerstag, 19. März 2020, 15:00–17:30, P2/3OG
In-situ Fabrication of Magnetic Topological Insulator Devices — •Max Vaßen-Carl1, Michael Schleenvoigt1, Tobias W. Schmitt2, Abdur R. Jalil1, Stefan Trellenkamp3, Florian Lentz3, Gregor Mussler1, Peter Schüffelgen1, and Detlev Grützmacher1 — 1Peter Grünberg Institute, Forschungszentrum Jülich & JARA Jülich-Aachen Research Alliance, 52425 Jülich, Germany — 2JARA-FIT Institute Green IT, RWTH Aachen University, 52062 Aachen, Germany — 3Helmholtz Nano Facility, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
Magnetic topological insulators (MTIs), which have their Fermi level in the exchange gap exhibit the quantum anomalous Hall (QAH) effect with chiral edge states. The latter are of high interest to spintronic applications. Moreover, by proximity coupling the MTI to a superconductor (SC), chiral Majorana edge modes are expected to arise. To access the QAH regime in MTIs, it is beneficial to avoid ambient conditions or chemicals during device fabrication, which may disturb the sensitive surface states. This makes ultra-high vacuum (UHV) fabrication techniques highly interesting for these materials. I will present a UHV technique that enables molecular beam epitaxy (MBE) growth of MTIs ((Cr)z(Bi,Sb)2-z(Te,Se)3) in selected areas on silicon substrates. In a second step, a normal conductor or SC can be deposited in-situ onto the MTI utilizing an angular arrangement, effectively creating MTI devices in the MBE without breaking the vacuum.