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O: Fachverband Oberflächenphysik
O 10: Oxides I: Growth and Characterization
O 10.1: Vortrag
Montag, 16. März 2020, 10:30–10:45, WIL B321
Growth, reconstruction and electronic band structure of ultrathin cuprous oxide Films on Ru(0001) — •Nicolas Braud1, Jan Ingo Flege2, Enrique G. Michel3, Paolo Moras4, and Jens Falta1 — 1Institute of Solid State Physics, University of Bremen, Germany — 2Applied Physics and SemiconductorSpectroscopy, BTU Cottbus-Senftenberg, Germany — 3Departemento de Fisica de la Materia Condensada, Universidad Autonoma de Madrid, Spain — 4Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche, Italy
Cuprous oxide Cu2O is a p-type direct semiconductor and is expected to play an important role in optoelectronics, solar technologies and in photoelectrochemistry due to its band gap of 2.17 eV and an optical gap of 2.62 eV which fit in the solar spectrum.
Here we present angle resolved photelectron spectroscopy investigations of thin two dimensional cuprous oxide films.
All the samples were characterized allong the ΓM and the ΓK direction in a photon range between 75 and 125 eV.
Depending on the oxide thickness we observe three different phases by LEED and LEEM.
After the oxidation of Cu/Ru(0001) in low oxygen partial pressure of 3× 10−6 mbar at 400∘, the surface exhibits a rectangular (3×2√3) reconstruction. Increasing the oxygen partial pressure up to 3×10−5 mbar leads to a (2√7×2√7)R19.1∘reconstructed hexagonal Cu2O(111)-like film. An oxygen pressure of 3× 10−6 mbar leads to a (2×2) reconstruction.
For these phases we also observed differences in the electronic band strucuture.