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O 91: Poster Session - Semiconductor Substrates: Structure, Epitaxy and Growth
Mittwoch, 18. März 2020, 18:15–20:00, P2/1OG
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18:15 |
O 91.1 |
A First-Principles Study of the Structure and Stability of Oxygen-Terminated Diamond(110) Surfaces — •Shayantan Chaudhuri and Reinhard J. Maurer
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18:15 |
O 91.2 |
Surface structure of MOVPE-prepared GaP(111)B — •Peter Kleinschmidt, Pingo Mutombo, Theresa Berthold, Agnieszka Paszuk, Matthias Steidl, Gernot Ecke, Andreas Nägelein, Christian Koppka, Oliver Supplie, Stefan Krischok, Oleksandr Romanyuk, Marcel Himmerlich, and Thomas Hannappel
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18:15 |
O 91.3 |
Impact of Al on defect formation in GaP buffer layers grown on Si(100) substrates in CVD ambience — •Manali Nandy, Agnieszka Paszuk, Christian Koppka, Markus Feifel, Peter Kleinschmidt, Frank Dimroth, and Thomas Hannappel
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