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T: Fachverband Teilchenphysik

T 40: Pixel Detectors 2

T 40.2: Vortrag

Dienstag, 22. März 2022, 16:30–16:45, T-H25

Device simulations of a MAPS developed in 65nm CMOS Imaging Technology — •Adriana Simancas for the Tangerine collaboration — Deutsches Elektronen-Synchrotron, Hamburg, Deutschland

Monolithic CMOS sensors have found their way through imaging technologies into High Energy Physics thanks to multiple advantages in particle detection. Their main characteristic is the integration of an active sensor and readout in the same silicon wafer, which provides a reduction in production effort, costs and material. The Tangerine project aims to develop the next generation of silicon pixel sensors for lepton colliders using a 65 nm CMOS imaging technology with a small collection electrode. It offers a significant improvement in the logic density of the pixels, the power consumption, the material budget and the S/N in comparison to previously studied technologies. Since the electric fields in monolithic sensors are quite complex, device simulations are needed to develop an understanding of this technology and provide important insight into performance parameters of the sensor. TCAD is a very powerful tool that allows to simulate the electrical properties of semiconductors. Herewith, it is possible to optimize the sensor layout and other features to achieve excellent time and spatial resolution. This contribution will present the latest developments in device simulation of a 65 nm CMOS sensor with a small collection electrode using TCAD.