Regensburg 2022 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 12: Quantum Dots and Wires 3: Growth
HL 12.6: Vortrag
Dienstag, 6. September 2022, 11:30–11:45, H32
Growth of shallow GaAs quantum dots and investigation of their optical properties — •Moritz Langer1, Nand Lal Sharma1, Ghata Satish Bhayani1, Ankita Choudhary1, Oliver G. Schmidt2, and Caspar Hopfmann1 — 1Institute for Integrative Nanoscience - IFW Dresden, Dresden, Germany — 2Center for Materials, Architectures, and Integration of Nanomembranes (MAIN), TU Chemnitz, Chemnitz, Germany
In recent years local droplet etching developed into an attractive growth process for strain-free semiconductor quantum dots. Typically, conical nanoholes etched into Al0.15Ga0.85As buffer layer by the droplet etching process using molecular beam epitaxy machine [1], have a width of about 50 nm and a depth of 15 nm. By using migration enhanced epitaxy, these nanoholes filled with GaAs and capped with an Al0.15Ga0.85As layer, buried around 6 nm high quantum dot structures of high optical quality are obtained. For enhanced interaction of quantum dots with external stimuli e.g. magnetic fields of thin films -, it is desirable to produce quantum dots close to the surface. Consequentially, the nature of the sample surface and the electronic and optical properties the quantum dot cannot be considered independently. For this purpose, the influence of capping layer thickness on the optical properties of GaAs/Al0.15Ga0.85As quantum dots are investigated using photoluminescence spectroscopy.
[1] Xiaoying Huang et al, 2020 Nanotechnology 31 495701 (2020)