Regensburg 2022 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 12: Quantum Dots and Wires 3: Growth
HL 12.7: Vortrag
Dienstag, 6. September 2022, 11:45–12:00, H32
Local droplet etching on InAlAs/InP surfaces with InAl droplets — •Yiteng Zhang1, Xin Cao1, Chenxi Ma1, Yinan Wang1, Benedikt Brechtken2, Rolf J. Haug2, Eddy P. Rugeramigabo1, Michael Zopf1, and Fei Ding1 — 1Institut für Festkörperphysik, Leibniz Universität Hannover, Hannover, Germany — 2Laboratorium für Nano- und Quantenengineering, Leibniz Universität Hannover, Hannover, Germany
GaAs quantum dots (QDs) grown by local droplet etching (LDE) have been studied extensively in recent years. The LDE method allows for high crystallinity, as well as precise control of the density, morphology, and size of QDs. These properties make GaAs QDs an ideal candidate as single photon and entangled photon sources at short wavelengths (<800 nm). For technologically important telecom wavelengths, however, it is still unclear whether LDE grown QDs can be realized. In this work, we study Indium-Aluminum (InAl) droplet etching on ultra-smooth In0.55Al0.45As surfaces on InP substrates, with a goal to lay the foundation for growing symmetrical and strain-free telecom QDs using the LDE method. We report that both droplets start to etch nanoholes at a substrate temperature above 415 °C, showing varying nanohole morphology and rapidly changing density (by more than one order of magnitude) at different temperatures. Al and In droplets are found to not intermix during etching, and instead etch nanoholes individually. The obtained nanoholes show a symmetric profile and very low densities, enabling infilling of lattice-matched InGaAs QDs on InAlAs/InP surfaces in further works.