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Dresden 2014 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 65: Devices

Wednesday, April 2, 2014, 11:30–13:15, POT 151

11:30 HL 65.1 Influence of Charge Trapping on Memory Characteristics of Si:HfO2-Based Ferroelectric Field Effect Transistors — •Milan Pešić, Stefan Mueller, Stefan Slesazeck, Alban Zaka, Tom Herrmann, Ekaterina Yurchuk, Uwe Schröder, and Thomas Mikolajick
11:45 HL 65.2 Non-volatile capacitance change in BiFeO3-coated photocapacitive MIS diodes — •l p Selvaraj, t You, v John, h Zeng, d Bürger, i Skorupa, a Lawerenz, o g Schmidt, and h Schmidt
12:00 HL 65.3 RF- and DC Characterization of the High-k to InGaAs Interface in Gate Last nMOSFETs — •Guntrade Roll, Mikael Egard, Sofia Johansson, Erik Lind, and Lars-Erik Wernersson
12:15 HL 65.4 Subnanosecond relaxation of free carriers in compensated n- and p-type germanium — •Nils Deßmann, Sergey Pavlov, Valery Shastin, Roman Zhukavin, Veniamin Tsyplenkov, Stephan Winnerl, Martin Mittendorff, Nikolai Abrosimov, Helge Riemann, and Heinz-Wilhelm Hübers
12:30 HL 65.5 Nickel-related defects and their interaction with H in n- and p-type Si. — •Leopold Scheffler, Vladimir Kolkovsky, Philipp Saring, and Jörg Weber
12:45 HL 65.6 Brittle to Ductile transition in silicon nanopillars — •Anton Davydok, Thomas W. Cornelius, Zhe Ren, Francesca Mastropietro, Michael Texier, Christophe Tromas, Ludovic Thilly, Marie-Ingrid Richard, and Olivier Thomas
13:00 HL 65.7 The consecutive photoresponse performance of porous silicon carbide ultraviolet photodetectors — •Nima Naderi and Md Roslan Hashim
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