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4364 results on 437 pages: 1 … 170 171 172 173 174 … 437
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Thu, 10:45 | HL 36.5 | Molecular Beam Epitaxy Growth and Temperature-Dependent Electrical Characterization of Carbon-Doped GaAs on GaAs(111)B — •Tobias Henksmeier, Alexander Trapp, Stepan Shvarkov, and Dirk Reuter |
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Thu, 11:00 | HL 36.6 | XPS and Disorder Analysis of Quaternary Ga1-xInxAs1-yBiy Semiconductor Alloys — •Julian Veletas, Thilo Hepp, Kerstin Volz, and Sangam Chatterjee |
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Thu, 11:15 | HL 36.7 | Role of Bismuth in the Bandstructure of Ga(As,Bi) studied by Photomodulated Reflectance Spectroscopy — •Frederik Otto, Julian Veletas, Lukas Nattermann, Kerstin Volz, and Sangam Chatterjee |
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Thu, 11:30 | HL 36.8 | Tunable plasmonics in heavily doped GaAs via ion implantation and sub-second annealing — •juanmei duan, mao wang, manfred helm, wolfgang skorupa, shengqiang zhou, and slawomir prucnal |
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Thu, 11:45 | HL 36.9 | Zeeman splitting features of novel III-V wurtzite materials — •Paulo E. Faria Junior, Davide Tedeschi, Marta De Luca, Benedikt Scharf, Antonio Polimeni, and Jaroslav Fabian |
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Thu, 12:00 | HL 36.10 | 1D photonic bandgap structures for high-power GaN/InGaN laser devices — •Prabha Sana, Christoph Berger, Marc Peter Schmidt, Gordon Schmidt, Armin Dadgar, Jürgen Bläsing, Martin Deckert, Hartmut Witte, Jürgen Christen, and André Strittmatter |
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Thu, 12:15 | HL 36.11 | Colloidal InP-based Quantum Dot Emitters: Limiting Factors for Color Purity — •Michael Binder, Alexander F. Richter, Alexander S. Urban, Itai Lieberman, Thomas Eberle, and Jochen Feldmann |
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Thu, 12:45 | HL 36.13 | Laser-assisted local metalorganic vapor phase epitaxy — •Max Trippel, Matthias Wieneke, Armin Dadgar, and André Strittmatter |
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Thu, 09:30 | HL 38.1 | Quantitative Analysis of the Density of Trap States in Organic Semiconductors by Electrical Transport Measurements on Low-Voltage Thin-Film Transistors — •Michael Geiger, Lukas Schwarz, Thomas Ferschke, Ute Zschieschang, Dirk Manske, Jens Pflaum, Jürgen Weis, Hagen Klauk, and Ralf Thomas Weitz |
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Thu, 09:45 | HL 38.2 | Fabrication and electrical properties of Rubrene/F6-TCNNQ charge transfer interfaces — •Bipasha Debnath, Daniel Waas, Martin Knupfer, Bernd Büchner, and Yulia Krupskaya |