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Berlin 2005 – scientific programme

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HL: Halbleiterphysik

HL 17: Poster Ib

Friday, March 4, 2005, 16:30–19:00, Poster TU F

16:30 HL 17.1 Untersuchung von strukturierten II-VI-Halbleiter-Nanopartikeln in unterschiedlicher Umgebung — •R. Lewinski, S. Dembski, A. Hoffmann, A. Gabriel, C. Graf, R Neder, M. Grimm, B. Langer und E. Rühl
16:30 HL 17.2 Untersuchung makroskopischer Lumineszenzausbreitung in ZnO — •Manuel Decker, Heiko Priller, Robert Hauschild, Heinz Kalt und Claus Klingshirn
16:30 HL 17.3 Quadrupole Interaction in Some Spinel Type Ternary Semiconductors — •Veaceslav Samokhvalov, Jens Kortus, Frank Schneider, and Sepp Unterricker
16:30 HL 17.4 Hall effect measurements on ZnO thin films — •Matthias Brandt, Holger von Wenckstern, Susanne Heitsch, Gabriele Benndorf, Holger Hochmuth, Michael Lorenz, and Marius Grundmann
16:30 HL 17.5 Influence of the incorporation of group V elements on the electrical properties of ZnO thin films — •Holger von Wenckstern, Susanne Heitsch, Gabriele Benndorf, Daniel Spemann, Michael Lorenz, and Marius Grundmann
16:30 HL 17.6 Brechungsindex von kubischem MgxZn1−xO — •Anke Carstens, Rüdiger Schmidt-Grund, Bernd Rheinländer, Mathias Schubert, Holger Hochmuth, Michael Lorenz, Craig M. Herzinger und Marius Grundmann
16:30 HL 17.7 FIR-MIR Fourier transform spectroscopy of Zn1−xMnxSe epilayers grown by molecular-beam epitaxy — •K. C. Agarwal, B. Daniel, C. Klingshirn, and M. Hetterich
16:30 HL 17.8 Wachstum und Charakterisierung zweidimensionaler ZnO:Al Nanoblätter und Nanowände durch Al2O3-unterstützte Carbothermale Verdampfung — •A. Rahm, G.W. Yang, M. Lorenz, Th. Nobis, J. Lenzner, G. Wagner und M. Grundmann
16:30 HL 17.9 Eignung von ZnO-Nanosäulen als Laseremitter — •Holger Lange, Robert Hauschild, Joachim Zeller, Rainer Kling, Andreas Waag, Claus Klingshirn und Heinz Kalt
16:30 HL 17.10 Room-temperature cathodoluminescence of n-type ZnO thin films grown by PLD in N2, N2O, and O2 background gas. — •M. Lorenz, H. Hochmuth, T. Nobis, J. Lenzner, G. Zimmermann, M. Diaconu, H. Schmidt, H. von Wenckstern, A. Schön, D. Schenk, and M. Grundmann
16:30 HL 17.11 Transport of spin-polarized excitons in Zn1−xMnxSe-based II-VI heterostructures — •B. Daniel, W. Löffler, D. Tröndle, C. Klingshirn, H. Kalt, and M. Hetterich
16:30 HL 17.12 Transport properties of n-doped Zn1−xMnxSe semimagnetic heterostructures — •B. Daniel, K. C. Agarwal, J. Lupaca-Schomber, J. Kvietkova, C. Klingshirn, and M. Hetterich
16:30 HL 17.13 Anionische Substitution in ZnMgTe — •Stefan Merita und Bruno K. Meyer
16:30 HL 17.14 Guided growth of zinc oxide nano-pillars using self-organizing polymers for patterning the substrate with a catalyst — •Andre Langlois, Anton Reiser, Günther M. Prinz, Andreas Ladenburger, Martin Schirra, Rolf Sauer, and Klaus Thonke
16:30 HL 17.15 Magneto-Photoluminescence and Raman study of zinc oxide nano-pillars — •Günther M. Prinz, Anton Reiser, Andre Langlois, Xinmin Cao, Andreas Ladenburger, Marek Potemski, Wolfgang Limmer, Rolf Sauer, and Klaus Thonke
16:30 HL 17.16 Optical phonons and infrared dielectric functions of hexagonal and cubic MgZnO thin films — •C. Bundesmann, M. Schubert, A. Rahm, D. Spemann, H. Hochmuth, E. M. Kaidashev, M. Lorenz und M. Grundmann
16:30 HL 17.17 Phonon and free-charge-carrier properties in — •Tino Hofmann, Bruno Daniel, Kapil Chandra Agarwal, Michael Hetterich und Mathias Schubert
16:30 HL 17.18 Evidence for an electrically conducting layer at the native zinc oxide surface — •Oliver Schmidt, Arnd Geis, Peter Kiesel, Noble Johnson, Andreas Waag, and Gottfried Döhler
16:30 HL 17.19 Analysis of a conducting channel at the ZnO surface using MOS structures — •Arnd Geis, Oliver Schmidt, Peter Kiesel, Noble Johnson, Andreas Waag, Andrey Bakin, and Gottfried Döhler
16:30 HL 17.20 Direct writing of two-dimensional electron gases by focused ion beam implantation doping of inverted GaAs/AlxGa1-xAs-heterostructures — •Christof Riedesel, Dirk Reuter, and Andreas D. Wieck
16:30 HL 17.21 Anharmonic potentials for quantum dot atoms. — •Joseph Ambrose Pagaran and Stephan Fritzsche
16:30 HL 17.22 Magneto transport measurements on overgrown cleaved edge heterostructures in hallbar-geometry — •Markus Lermer, Elisabeth Reinwald, Werner Wegscheider, and Dieter Weiss
16:30 HL 17.23 Defect analysis at the a-Si:H/c-Si heterojunction — •Abdelazize Laades, Lars Korte, Karsten v. Maydell, Christian Schubert, Klaus Kliefoth, Manfred Schmidt, and Walther Fuhs
16:30 HL 17.24 Diamagnetic Shift of localized excitons in GaAs/AlGaAs Quantum Wells — •M. Erdmann, M. Wenderoth, R.G. Ulbrich, S. Malzer, and G. Döhler
16:30 HL 17.25 Global view on the electronic properties of two-electron anisotropic quantum dots — •Panagiotis Drouvelis, Peter Schmelcher, and Fotis Diakonos
16:30 HL 17.26 All-electron GW code based on FP-(L)APW+lo — •Xinzheng Li, Ricardo Gomez-Abal, and Matthias Scheffler
16:30 HL 17.27 Investigation of Schottky diodes in high magnetic fields — •Matthias Schmidt, Holger von Wenckstern, Rainer Pickenhain, Michael Ziese, Pablo Esquinazi, and Marius Grundmann
16:30 HL 17.28 Modeling the electrical properties of interfaces obtained via UHV wafer bonding — •Alin Mihai Fecioru, Stephan Senz, and Ulrich Michael Gösele
16:30 HL 17.29 Dotierelementabhängigkeit der Rauigkeit von elektronischen Grenzflächen in GaAs — •Sebastian Landrock, Nikos Jäger, Knut Urban und Philipp Ebert
16:30 HL 17.30 Scanning Tunneling Microscopy of Substitutional Phosphorus Atoms on different Lattice Sites in the Si(111)-(2×1) Surface — •J. K. Garleff, M. Wenderoth, R. G. Ulbrich, C. Sürgers, and H. v. Löhneysen
16:30 HL 17.31 Conductivity and preparation of nanowires — •F. Kost, T. Kolb, A. Pucci, M. Jalochowski, V. Hnatyuk und G. Fahsold
16:30 HL 17.32 Classical Analysis of Trajectories in an Open Quantum Dot — •Roland Brunner, R. Meisels, F. Kuchar, M. Elhassan, J. Bird, and K. Ishibashi
16:30 HL 17.33 Time-resolved THz-spectroscopy of Graphite — •Florian Schapper, Tobias Kampfrath, Luca Perfetti, Christian Frischkorn, and Martin Wolf
16:30 HL 17.34 Elektrische Transportmessungen in MeV dotierten Diamant-Substraten — •V.A. Tchernychev, T. Vogel und J. Meijer
16:30 HL 17.35 Optical and electronic properties of nitrogen-doped ultrananocrystalline diamond thin films — •Philipp Achatz, Jose-Antonio Garrido, and Martin Stutzmann
16:30 HL 17.36 Einfluss der räumlichen Dispersion auf die Lumineszenz von Halbleitern — •Frithjof Meinke und Klaus Henneberger
16:30 HL 17.37 Photoluminescence properties of ZnO nanowires at low temperatures — •Lars Wischmeier, Tobias Voss, Ilja Rückmann, Sandra Börner, and Wolfgang Schade
16:30 HL 17.38 Konzentrische a-Si/SiOx Bragg-Reflektoren — •Rüdiger Schmidt-Grund, Tobias Gühne, Bernd Rheinländer, Volker Gottschalch, Helmut Herrnberger, Thomas Nobis und Marius Grundmann
16:30 HL 17.39 Laser-induced absorption changes in Cu2O — •Tibor Fleck, Michael Jörger, and Claus Klingshirn
16:30 HL 17.40 Exzitonische Effekte in optischen Spektren von Volumenkristallen: Implementierung der Bethe-Salpeter-Gleichung für PAW Pseudopotentiale — •Patrick Hahn, Wolf-Gero Schmidt, Kaori Seino, Jürgen Furthmüller und Friedhelm Bechstedt
16:30 HL 17.41 Characterization of vertical-cavity surface-emitting laser structures by modulation spectroscopy — •C. Karcher, B. Metzger, P.J. Klar, and W. Heimbrodt
16:30 HL 17.42 Anomalous temperature-dependence of free-charge-carrier concentration in modulation-doped AlxGa1−xAs/GaAs quantum well superlattices studied by far-infrared magnetooptic Mueller-matrix ellipsometry — •Tino Hofmann, Claas von Middendorff, Gunnar Leibiger und Mathias Schubert
16:30 HL 17.43 Fabrication of high-Q microdisks with embedded InAs quantum dots — •F. Wilde, T. Kipp, Ch. Heyn und D. Heitmann
16:30 HL 17.44 Size dependent excitation energies of valence band plasmons in Si and SnOx nanoparticles — •H Nienhaus, V Kravets, A Lorke, H Wiggers, M Kennedy, and F E Kruis
16:30 HL 17.45 SILICON LIGHT EMITTING DIODES PREPARED BY ION IMPLANTATION OF PHOSPHOROUS AND BORON — •Yevgen Yeromenko, Tzanimir Arguirov, Martin Kittler, and Winfried Seifert
16:30 HL 17.46 Luminescence of Ge/Si heterostructures with miniband realized by Sb doping — •Vadim Talalaev, George Cirlin, Alexander Tonkikh, Nikolay Zakharov, and Peter Werner
16:30 HL 17.47 Deposition von Si- und Ho-Ionen in GaAs/AlxGa1−xAs Heterostrukturen mittels fokussierter Ionenimplantation — •Sinan Ünlübayir, Dirk Reuter, Alexander Melnikov und Andreas D. Wieck
16:30 HL 17.48 Elektrische Charakterisierung von (Ga,Mn)As — •SAFAK GÖK, Hartmut Zabel und Andreas Wieck
16:30 HL 17.49 MOVPE growth of BxGa1−xP alloys on (001) GaP substrates — •Volker Gottschalch, Gunnar Leibiger, Jens Bauer, and Gabi Benndorf
16:30 HL 17.50 (InGa)As Laserbauelemente (1,2 µm) mit vergütetem Resonator — •Tobias Gühne, Volker Gottschalch, Gunnar Leibiger, Helmut Herrnberger, Jaro Kovač, Jaro Kovač jr., Rüdiger Schmidt-Grund und Bernd Rheinländer
16:30 HL 17.51 MOVPE-Darstellung freistehender AIIIBV-Nanodrähte — •Jens Bauer, Volker Gottschalch, Helmut Herrnberger und Gerald Wagner
16:30 HL 17.52 Magneto-optical spectroscopy and thermal annealing effects in GaInNAs / GaAs quantum well structures and bulk GaAsN — •A. Grau, P. Feinäugle, W. Löffler, H. Kalt, and M. Hetterich
16:30 HL 17.53 Studies of the local vibrational N-mode in III-N-V dilute nitrides by Raman spectroscopy — •M. Güngerich, P.J. Klar, W. Heimbrodt, B. Kunert, K. Volz, and W. Stolz
16:30 HL 17.54 Investigation and modelling of the temperature-dependent electronic states in GaNAs and GaInNAs/GaAs quantum well structures — •M. Hetterich, A. Grau, T. Passow, A.Yu. Egorov, and H. Riechert
16:30 HL 17.55 Magneto-gyrotroper photogalvanischer Effekt in Halbleiter- Quantentrögen — •Wolfgang Weber, V.V. Bel’kov, S.D. Ganichev, E.L. Ivchenko, S.A. Tarasenko, S.N. Danilov, Petra Schneider, S. Giglberger, M. Olteanu, P. Tranitz, W. Wegscheider, D. Weiss und W. Prettl
16:30 HL 17.56 Ultrahigh vacuum direct bonding of III-V semiconductors at room temperature after cleaning with hydrogen ion — •Nasser Razek, Axel Schindler, Volker Gottschalch, and Bernd Rauschbach
16:30 HL 17.57 Optical orientation of electron spins in GaAs quantum wells — •Stefan Pfalz, Roland Winkler, Tobias Nowitzki, Dirk Reuter, Andreas Wieck, Daniel Hägele, and Michael Oestreich
16:30 HL 17.58 Spin dependent bleaching of the optical absorption in GaAs-QWs — •Michael Römer, Stefan Pfalz, Roland Winkler, Daniel Hägele, and Michael Oestreich
16:30 HL 17.59 Parasitäre Moden in GaN Doppelheterostruktur Laserdioden — •Holger Fischer, Ulrich T. Schwarz, Thomas Schödl, Markus Pindl, Georg Feicht, Michael Furitsch, Andreas Leber, Andreas Miler, Alfred Lell und Volker Härle
16:30 HL 17.60 Molekular-Strahl-Epitaxie von Mn dotierten GaN Schichten — •Martin Kocan, Martin Roever, Dong-Du Mai, Marco Bertelli, Tore Niermann, Jörg Malindretos, Jan Zenneck, Michael Seibt und Angela Rizzi
16:30 HL 17.61 Scanning Tunneling Spectroscopy of Carbon and Zinc Acceptors in GaAs — •S. Loth, M. Wenderoth, T. C. G. Reusch, L. Winking, R. G. Ulbrich, S. Malzer, and G. Döhler
16:30 HL 17.62 Optical and magnetic properties of rare earth implanted AlN — •G. Öhl, U. Vetter, M. Uhrmacher, C. Ronning, and H. Hofsäss
16:30 HL 17.63 Structural and magnetic properties of Co-implanted ZnO films — •Numan Akdogan, Alexei Nefedov, Hartmut Zabel, and Hans-Werner Becker
16:30 HL 17.64 Structural, optical and electrical properties of p-type transparent conducting CuAlO2 thin films prepared by RF reactive sputtering — •Bin Yang, Bruno K. Meyer, Angelika Polity, Thorsten Krämer, and Baker Farangis
16:30 HL 17.65 Elektrische und optische Charakterisierung elektrochemisch abgeschiedener Zinkoxid/Farbstoff-Absorbermaterialien — •Jens Reemts, Jürgen Parisi und Achim Kittel
16:30 HL 17.66 Two Photons photoemission from metastable continuum states of fullerens and nanoclusters — •Oleg Kidun, Jamal Berakdar, and Natasha Fominykh
16:30 HL 17.67 In-plane gate transistors realized by writing with focused-ion-beam implantation — •Mihai Draghici, Dorina Diaconescu, Dirk Reuter, and Andreas D. Wieck
16:30 HL 17.68 Evaluation of active semiconductor structures by combined scanning thermo-elastic microscopy and finite element simulations — •Ralf Meckenstock, Dirk Dietzel, Sutharat Chotikaprakhan , Jean L.N. Fotsing, Josef Pelzl, and Simone Cassette
16:30 HL 17.69 Relationship between Mn 3d electron hybridization and magnetic order in (GaMn)As dilute ferromagnetic semiconductors — •F. Kronast, R. Osyannikov, A. Vollmer, H.A. Dürr, W. Eberhardt, P. Imperia, D. Schmitz, G. Schott, K. Brunner, M. Sawicki, and L. Molenkamp
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